How is SCLC mobility calculated?
How is SCLC mobility calculated?
Charge carrier mobility can be measured in the SCLC regime as described by J=9ε0εrμV2/8L3, (1) Where ε0 is the permittivity of free space (8.8542×10-12 F/m), εr is the dielectric constant of the active layer, μe is the electron mobility, V is the voltage drop across the device, L is the active layer thickness.
What is SCLC mobility?
SCLC mobility measurements are typically performed by measuring steady-state current–voltage (I–V) curves and fitting with either of Eqs. (1), (3) by varying the fit parameters (μSCLC or μ0 and γ) with other parameters (V, d, AND ε) known or assumed.
What is the value of mobility of electron?
Basic Properties
| Breakdown field | ≈3·105V/cm |
|---|---|
| Mobility electrons | ≤1400 cm2 V-1s-1 |
| Mobility holes | ≤450 cm2 V-1s-1 |
| Diffusion coefficient electrons | ≤36 cm2/s |
| Diffusion coefficient holes | ≤12 cm2/s |
Which characterization technique is used for mobility measurement of organic semiconductor?
TIME OF FLIGHT. TOF is a widely used technique for determination of charge carrier mobilities in organic semiconductors.
What is space charge limited?
in the space-charge limited current (SCLC) regime, the current is dominated by charge carriers injected from the contacts and the current-voltage characteristics becomes quadratic (I ~ V2). In the trap free material current increases as squire of Voltage.
What is space charge in diode?
Space charge, electrical charge distributed through a three-dimensional region. It is this cloud of electrons that produces the negative space charge.
What is space charge limited condition?
in the space-charge limited current (SCLC) regime, the current is dominated by charge carriers injected from the contacts and the current-voltage characteristics becomes quadratic (I ~ V2). Due to space charge created at high fields, current becomes super ohmic.
What does space charge limited mean?
• Two-carrier space-charge-limited flow with recombination centers. 2. One-carrier space-charge-limited. Definition: if an electron injecting contact is applied to an insulator, electrons will travel from the metal into the conduction band of the insulator and form a space-charge similar to that of a vacuum diode.
What is the formula of mobility of electron?
The measurement of how fast an electron can move through a semiconductor or a metal which is under the influence of an external electric field is known as electron mobility. We can show electron mobility mathematically by the equation, μ=VdE .
What is mobility formula?
Mobility μ is defined as the magnitude of drift velocity per unit electric field. μ=E∣vd∣. Its SI unit is m2/Vs.
How do you measure mobility of a semiconductor?
Measurement of semiconductor mobility
- Carrier mobility is most commonly measured using the Hall effect.
- Consider a semiconductor sample with a rectangular cross section as shown in the figures, a current is flowing in the x-direction and a magnetic field is applied in the z-direction.
Which of the following is used in organic semiconductors?
The organic semiconductors that are used are pentacene, poly (3-hexylthiophene) (P3HT), poly (3-alkylthiophene) (P3AT), and poly (3-octylthiophene) (P3OT), which can be deposited by vacuum evaporation and solution processing techniques (Shekar et al., 2004).
How is the conductivity of an electron related to mobility?
They are related by 1m 2/(V⋅s) = 10 4cm 2/(V⋅s). Conductivity is proportional to the product of mobility and carrier concentration. For example, the same conductivity could come from a small number of electrons with high mobility for each, or a large number of electrons with a small mobility for each.
What is the relation between electron and hole mobility?
There is an analogous quantity for holes, called hole mobility. The term carrier mobility refers in general to both electron and hole mobility. Electron and hole mobility are special cases of electrical mobility of charged particles in a fluid under an applied electric field. .
How is the diffusion coefficient of an electron related to its mobility?
The diffusion coefficient for a charge carrier is related to its mobility by the Einstein relation : Typical electron mobility at room temperature (300 K) in metals like gold, copper and silver is 30–50 cm 2 / (V⋅s). Carrier mobility in semiconductors is doping dependent.
Is the mobility of an electron dependent on the drift velocity?
In the regime of velocity saturation (or other high-field effects), mobility is a strong function of electric field. This means that mobility is a somewhat less useful concept, compared to simply discussing drift velocity directly. Recall that by definition, mobility is dependent on the drift velocity.